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Electrical Responses of Artificial DNA Nanostructures on Solution-Processed In-Ga-Zn-O Thin-Film Transistors with Multistacked Active Layers

2012; American Chemical Society; Volume: 5; Issue: 1 Linguagem: Inglês

10.1021/am302210g

1944-8252

Joohye Jung, Si Joon Kim, Doo Hyun Yoon, Byeong‐Hoon Kim, Sung Ha Park, Hyun Jae Kim,

Advanced biosensing and bioanalysis techniques

We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use of multistacked active layers. Our IGZO TFT had a turn-on voltage (Von) of −0.8 V and a subthreshold swing (SS) value of 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the IGZO surface, after which an anomalous hump effect accompanying a significant decrease in Von (−13.6 V) and degradation of SS (1.29 V/decade) was observed. This sensing behavior was attributed to the middle interfaces of the multistacked active layers and the negatively charged phosphate groups on the DNA backbone, which generated a parasitic path in the TFT device. These results compared favorably with those reported for conventional field-effect transistor-based DNA sensors with remarkable sensitivity and stability.