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Strained N–Ga 0.7 Al 0.3 As/In x Ga 1-x As/GaAs Modulation-Doped Structures

1987; Institute of Physics; Volume: 26; Issue: 4R Linguagem: Inglês

10.1143/jjap.26.539

1347-4065

Akihiko Okamoto, Hideo Toyoshima, Keiichi Ohata,

Semiconductor materials and devices

Strained N–Ga 0.7 Al 0.3 As/In x Ga 1- x As/GaAs modulation-doped structures were successfully fabricated. Also, a high concentration of two-dimensional electron gas (2DEG) (about 2×10 12 cm -2 ) was found to accumulate at heterointerfaces. Upon increasing the In composition in the InGaAs layer, the 2DEG concentration increased and the mobility decreased. Thus, a modulation-doped structure with In 0.23 Ga 0.77 As at room temperature has the lowest sheet resistance (about 500 ohms); this is two thirds of that for a conventional modulation-doped structure. The proposed structure is promising for field effect transistors with low channel resistances.