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III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

2016; Optica Publishing Group; Volume: 24; Issue: 8 Linguagem: Inglês

10.1364/oe.24.008480

1094-4087

Ruijun Wang, Muhammad Muneeb, Stephan Sprengel, Gerhard Boehm, Aditya Malik, Roel Baets, Markus‐Christian Amann, Günther Roelkens,

Semiconductor Lasers and Optical Devices

2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented.Low insertion loss (2.5-3 dB) and low crosstalk (-30 to -25 dB) AWGs are realized.The InP-based type-II photodetectors are integrated with the AWGs using two different coupling approaches.Adiabatic-taper-based photodetectors show a responsivity of 1.6 A/W at 2.35 µm wavelength and dark current of 10 nA at -0.5 V, while photodetectors using grating-assisted coupling have a responsivity of 0.1 A/W and dark current of 5 nA at -0.5 V.The integration of the photodetector array does not degrade the insertion loss and crosstalk of the device.The photodetector epitaxial stack can also be used to realize the integration of a broadband light source, thereby enabling fully integrated spectroscopic systems.