Nitridomagnesosilicate Ba[Mg 3 SiN 4 ]:Eu 2+ and Structure–Property Relations of Similar Narrow-Band Red Nitride Phosphors
2015; American Chemical Society; Volume: 27; Issue: 5 Linguagem: Inglês
10.1021/cm504604d
ISSN1520-5002
AutoresSebastian Schmiechen, Philipp Strobel, Cora Hecht, Thomas Reith, Markus Siegert, Peter J. Schmidt, Petra Huppertz, Detlef Wiechert, Wolfgang Schnick,
Tópico(s)Solid-state spectroscopy and crystallography
ResumoThe nitridomagnesosilicate Ba[Mg3SiN4] has been synthesized in an arc-welded Ta ampule. The crystal structure was solved and refined from single-crystal X-ray data and Rietveld refinement on the basis of powder X-ray diffraction data, revealing a distorted triclinic variant of the UCr4C4 structure type (space group P1̅ (no. 2), Z = 1, a = 3.451(1), b = 6.069(5), c = 6.101(4) Å, α = 85.200(7), β = 73.697(5), γ = 73.566(8)°, Rp = 0.0218, Rwp = 0.0290). The crystal structure of Ba[Mg3SiN4] consists of a highly condensed network of (Mg,Si)N4 tetrahedra with Ba2+ centered inside vierer ring channels along [100] in a cuboidal coordination by N3–. From UV/vis-reflectance data, a band gap of ∼4.0 eV was estimated. Doping with Eu2+ shows promising luminescence properties of λem = 670 nm with an fwhm ∼1970 cm–1. Furthermore, anomalous luminescence phenomena, such as trapped-exciton emission, were identified and considered. Ba[Mg3SiN4]:Eu2+ is a further narrow-band red-emitting phosphor and is discussed concerning the structure–property relations of recently reported Eu2+-doped nitrides with narrow-band red emission.
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