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Diffusion Coefficient Modeling of a Silicon Solar Cell under Irradiation Effect in Frequency: Electric Equivalent Circuit

2015; Volume: 19; Issue: 2 Linguagem: Inglês

10.14445/22315381/ijett-v19p211

2349-0918

Ibrahima Tall, Boureima Seibou, Mohamed Abderrahim Ould El Moujtaba, Amadou Diao, Mamadou Wade, Grégoire Sissoko,

Thin-Film Transistor Technologies

In this paper, a theory on the determination of the diffusion coefficient of the excess minority carriers of a silicon solar cell is presented. The expression of the diffusion coefficient, related to the modulation frequency, the irradiation energy and the damage coefficient is studied and then performed by using the impedance spectroscopy method and Bode and Nyquist diagrams. Based on the diffusion coefficient, we deduce the diffusion length, the cutoff frequency and some electrical parameters obtained from the equivalent circuits of the diffusion coefficient.