Electroless deposition of Alpha-PbO2 and Tl2O3
1980; Springer Science+Business Media; Volume: 2; Issue: 4 Linguagem: Inglês
10.1007/bf02802067
ISSN0973-7669
AutoresR. N. Bhattacharya, Panchanan Pramanik,
Tópico(s)Semiconductor materials and interfaces
ResumoA chemical method for electroless deposition of thin film ofa-PbO2 and Tl2O3 has been developed. The deposition has been performed by ammonia, persulfate ion and metal ions at a higher temperature. The electrical resistance, mobility and carrier concentration have been measured with variation of thickness of the films. Optical absorption spectra reveal the band edges which are 1·7 eV and 1·95 eV ofa-PbO2 and Tl2O3 respectively.
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