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CMOS Technology Development for a Totally Digital A/D Converter

2007; Institute of Physics; Volume: 4; Issue: 1 Linguagem: Inglês

10.1149/1.2813472

2151-2051

Giovani Pesenti, R. C. da Silva, H. Boudinov, A.D. Andrade, A. Zani, J. O. Mainardi, Tiago R. Balen, Luigi Carro,

Silicon and Solar Cell Technologies

A fully analog-to-digital converter was fabricated with a new developed educational poly-Si gate 5μm CMOS technology of the Laboratory of Microelectronics of Instituto de Física, Universidade Federal do Rio Grande do Sul. The ISE_TCAD simulation software was used for technology adjustment and design parameters extraction. These simulations were used to obtain data like effective channel length, junction depth, and also to determine the critical steps of the technological process. The A/D converter consists on a ring oscillator, a 8-bit counter and input/output buffers. Test structures like p-type and n-type Poly-Si/SiO2/Si MOS capacitors, PMOS and NMOS transistors, inverter and output buffer were included in the chip design. The set of 8 chromium lithography masks was ordered from DuPont, USA. After processing the chip, electrical measurements of the test structures, and circuit modules were performed.