Highly selective ZnO gas sensor based on MOSFET having a horizontal floating-gate
2016; Elsevier BV; Volume: 232; Linguagem: Inglês
10.1016/j.snb.2016.04.010
ISSN1873-3077
AutoresYoonki Hong, Changhee Kim, Jongmin Shin, Kyoung Yeon Kim, Jun Shik Kim, Cheol Seong Hwang, Jong‐Ho Lee,
Tópico(s)ZnO doping and properties
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