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Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application

2016; American Institute of Physics; Volume: 119; Issue: 16 Linguagem: Inglês

10.1063/1.4947290

1520-8850

Ronaldo P. de Melo, Nathália Talita C. Oliveira, Christian Tolentino Dominguez, Anderson S. L. Gomes, Eduardo Henrique Lago Falcão, Severino Alves, Leonis Lourenço da Luz, Rémi Chassagnon, Cid B. de Araújo, M. Sacilotti,

ZnO doping and properties

A novel procedure based on a two-step method was developed to obtain β-Ga2O3 nanowires by the chemical vapor deposition (CVD) method. The first step consists in the gallium micro-spheres growth inside a metal-organic chemical vapor deposition environment, using an organometallic precursor. Nanoscale spheres covering the microspheres were obtained. The second step involves the CVD oxidization of the gallium micro-spheres, which allow the formation of β-Ga2O3 nanowires on the micro-sphere surface, with the final result being a nanostructure mimicking nature's sea urchin morphology. The grown nanomaterial is characterized by several techniques, including X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and photoluminescence. A discussion about the growth mechanism and the optical properties of the β-Ga2O3 material is presented considering its unknown true bandgap value (extending from 4.4 to 5.68 eV). As an application, the scattering properties of the nanomaterial are exploited to demonstrate random laser emission (around 570 nm) when it is permeated with a laser dye liquid solution.