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Chemical Mechanical Polishing of Epitaxial Germanium on SiO 2 -patterned Si(001) Substrates

2008; Institute of Physics; Volume: 16; Issue: 10 Linguagem: Inglês

10.1149/1.2986777

2151-2051

Jennifer M. Hydrick, Ji-soo Park, Jie Bai, Cheryl Major, M. Curtin, J.G. Fiorenza, M. Carroll, Anthony Lochtefeld,

Silicon Nanostructures and Photoluminescence

Aspect Ratio Trapping is a promising technique for heterointegration of Ge onto Si substrates. By growing Ge in patterned SiO 2 trenches, lattice-mismatch dislocations arising from the epitaxial interface can be effectively trapped. However, planarization of these samples is required to enable device fabrication. This paper describes the development and optimization of a chemical mechanical polishing process for these structures. Polishing using diluted Nalco 2360 slurry was investigated, with the addition of NaOCl, NH 4 OH, or H 2 O 2 , for Ge removal rate increase. A slurry mix consisting of Nalco 2360, H 2 O 2 , and DI water was shown to have low dishing and low surface metals contamination, and planarized the Ge Aspect Ratio Trapping samples very effectively.