High Sensitivity Semiconductor NO[sub 2] Gas Sensor Based on Mesoporous WO[sub 3] Thin Film
2003; Electrochemical Society; Volume: 6; Issue: 8 Linguagem: Inglês
10.1149/1.1585252
ISSN1944-8775
AutoresLay Gaik Teoh, I‐Ming Hung, Jiann Shieh, Wei Hao Lai, Min‐Hsiung Hon,
Tópico(s)Advanced Chemical Sensor Technologies
ResumoA gas sensor based on mesoporous thin film with low operating temperatures and its sensing characteristics are reported. The mesoporous thin film exhibits regular pores with an average pore size of 5 nm and specific surface area of 151 m2/g. Excellent sensing properties are found upon exposure to 3 ppm of at 35-100°C for mesoporous thin film. The sensor response is 180 for 3 ppm at 100°C. The ability to sense at such low temperatures is attributed to the large surface area (151 m2/g) that offers many active sites for reaction with molecules. © 2003 The Electrochemical Society. All rights reserved.
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