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Toward error-free scaled spin torque majority gates

2016; American Institute of Physics; Volume: 6; Issue: 6 Linguagem: Inglês

10.1063/1.4953672

2158-3226

Adrien Vaysset, Mauricio Manfrini, Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young, Geoffrey Pourtois, Iuliana Radu, Aaron Thean,

Semiconductor materials and devices

The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.