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Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides

2016; Volume: 28; Issue: 34 Linguagem: Inglês

10.1002/adma.201601184

1521-4095

Hui Cai, Emmanuel Soignard, Can Ataca, Bin Chen, Changhyun Ko, Toshihiro Aoki, Anupum Pant, Xiuqing Meng, Shengxue Yang, Jeffrey C. Grossman, Frank Ogletree, Sefaattin Tongay,

Advanced Semiconductor Detectors and Materials

Atomically thin quasi-2D GaSe flakes are synthesized via van der Waals (vdW) epitaxy on a polar Si (111) surface. The bandgap is continuously tuned from its commonly accepted value at 620 down to the 700 nm range, only attained previously by alloying Te into GaSe (GaSex Te1- x ). This is accomplished by manipulating various vdW epitaxy kinetic factors, which allows the choice bet ween screw-dislocation-driven and layer-bylayer growth, and the design of different morphologies with different material-substrate interaction (strain) energies.