Area-Efficient SOT-MRAM With a Schottky Diode
2016; Institute of Electrical and Electronics Engineers; Volume: 37; Issue: 8 Linguagem: Inglês
10.1109/led.2016.2578959
ISSN1558-0563
AutoresYeongkyo Seo, Kon‐Woo Kwon, Kaushik Roy,
Tópico(s)Advanced Memory and Neural Computing
ResumoThis letter presents a spin-orbit torque magnetic random access memory (SOT-MRAM) for high-density, reliable, and energy-efficient on-chip memory application. Unlike the conventional SOT-MRAM requiring two access transistors, the proposed MRAM uses only one access transistor along with a Schottky diode in order to achieve high integration density while maintaining the advantages of SOT-MRAM, such as low write energy and enhanced reliability of magnetic tunnel junction. The Schottky diode is forward-biased during read, whereas it is reverse-biased during write to prevent sneak current paths. Our simulation results show that the proposed MRAM can achieve 30% and 50% reduction in bit-cell area in comparison to conventional spin-transfer torque MRAM (STT-MRAM) and SOT-MRAM, respectively, and ~2.5× improvement in write power compared with the STT-MRAM.
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