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Band gap engineering of N-alloyed Ga2O3 thin films

2016; American Institute of Physics; Volume: 6; Issue: 6 Linguagem: Inglês

10.1063/1.4954720

2158-3226

Dongyu Song, Li Li, Bingsheng Li, Yu Sui, Aidong Shen,

GaN-based semiconductor devices and materials

The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH3 and Ar gas for 60 minutes. Then they were annealed in NH3 ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.