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Ultra-High Tunability of <inline-formula> <tex-math notation="LaTeX">$\text{Ba}_{(2/3)}\text{Sr}_{(1/3)}\text{TiO}_{3}$</tex-math> </inline-formula>-Based Capacitors Under Low Electric Fields

2016; IEEE Microwave Theory and Techniques Society; Volume: 26; Issue: 7 Linguagem: Inglês

10.1109/lmwc.2016.2576455

1558-1764

Areski Ghalem, M. Rammal, Laure Huitema, Aurelian Crunteanu, Valérie Madrangeas, Perrine Dutheil, Frédéric Dumas-Bouchiat, Pascal Marchet, C. Champeaux, Lucian Trupinǎ, L. Nedelcu, M.G. Banciu,

Microwave Dielectric Ceramics Synthesis

We report the high-frequency electrical characterization of Ba (2/3) Sr (1/3) TiO 3 (BST) thin films exhibiting a very high dielectric tunability with low losses at 2.45 GHz under very low applied electrical fields. BST layers were integrated in out-of-plane Metal-Insulator-Metal (MIM) devices with optimized Ir/MgO(100) bottom electrodes. The high frequency properties of BST films with thicknesses of 200 nm, 450 nm and 1450 nm were thoroughly investigated in the 100 MHz-10 GHz domain and exhibit extremely high capacitance tuning abilities of 82%, 81% and 70% respectively, under applied voltages as low as 10 V. MIM devices responses show the onset of acoustic resonances associated with the BST electrostrictive behavior under an electric field. By combining high tunability with low resistive losses under low applied voltages, these devices are opening promising avenues for their integration in high-performance tunable devices in the microwave domain and particularly at 2.45 GHz, corresponding to the widely used ISM (industrial, scientific and medical) frequency band.