Studies on the Thermal Stability of Ni/ n –GaN and Pt/ n –GaN Schottky Barrier Diodes
2016; IOP Publishing; Volume: 3; Issue: 8 Linguagem: Inglês
10.1088/2053-1591/3/8/085901
ISSN2053-1591
AutoresAshish Kumar, Somna S. Mahajan, Seema Vinayak, R. Singh,
Tópico(s)Semiconductor materials and devices
ResumoHigh temperature annealing of Ni and Pt Schottky diodes on n-GaN has been investigated. Ni/n–GaN and Pt/n–GaN Schottky diodes were fabricated using ultra high vacuum and annealed at various temperatures (200 °C−700 °C) using rapid thermal anneal system. It was observed that in case of Ni/GaN diodes, the Schottky barrier height increases for 200 °C and then decreases with increase in annealing temperature. For Pt/GaN diodes, the barrier height found to decrease with increase in annealing temperature. The observed variation of barrier height and ideality factor is discussed on the basis of interfacial chemical reactions between metal and semiconductor.
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