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A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

2016; Elsevier BV; Volume: 126; Linguagem: Inglês

10.1016/j.sse.2016.09.011

1879-2405

Oana Moldovan, A. Castro-Carranza, A. Cerdeira, M. Estrada, Pedro Barquinha, Rodrigo Martins, Elvira Fortunato, Slobodan Miljakovic, Benjamı́n Iñiguez,

CCD and CMOS Imaging Sensors

An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices.