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A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

2016; Nature Portfolio; Volume: 6; Issue: 1 Linguagem: Inglês

10.1038/srep33576

2045-2322

Hunho Kim, Young‐Jin Kwack, Eui‐Jung Yun, Woon‐Seop Choi,

Ferroelectric and Negative Capacitance Devices

Abstract Solution-processed gate dielectrics were fabricated with the combined ZrO 2 and Al 2 O 3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm 2 /Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 10 5 , and a subthreshold slope of 0.10 V/dec.