Portal de Periódicos da CAPES

Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure

2016; Royal Society of Chemistry; Volume: 4; Issue: 44 Linguagem: Inglês

10.1039/c6ta07700e

2050-7488

Pu Huang, Junjie Shi, Ping Wang, Min Zhang, Yi-min Ding, Meng Wu, Jing Lü, Xinqiang Wang,

Ga2O3 and related materials

The origin of the wide band gap in InN is revealed and the surface nanostructure of InN with amazing characteristics is investigated in detail.