= 8.3 [micro sign]m GaAs/AlAs quantum cascade lasers incorporating InAs monolayers
2001; Institution of Engineering and Technology; Volume: 37; Issue: 21 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresL. R. Wilson, J. W. Cockburn, D.A. Carder, Matthew J. Steer, M. Hopkinson, C. K. Chia, R. Airey, G. Hill,
Tópico(s)Laser Design and Applications
ResumoThe development of GaAs-based quantum cascade lasers incorporating indirect bandgap AlAs barriers in conjunction with ultrathin InAs layers in the active regions of the device is reported. The InAs layers produce a downshift of the energies of the lower lasing states, allowing laser emission to be observed at λ = 8.34 µm. The GaAs/InAs/AlAs devices operate in pulsed mode up to a maximum temperature of 250 K, with a characteristic temperature of around 200 K for T > 100 K.
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