1 W CW reliable = 730 nm aluminium-free active layer diode laser
2000; Institution of Engineering and Technology; Volume: 36; Issue: 7 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresS. Rusli, A. Al-Muhanna, T. Earles, L. J. Mawst,
Tópico(s)Solid State Laser Technologies
Resumo1 W continuous wave (CW) reliable operation (~1000 h) in large transverse spot-size (d/Γ = 0.55 µm), compressively strained, InGaAsP (λ = 0.73 µm)-active region diode lasers is demonstrated. The use of tensile-strained InGaP barrier layers provides strain-compensation and results in a weak temperature sensitivity for the threshold current (T0 = 125 K) and external differential quantum efficiency (T1 = 410 K).
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