Transferred-substrate HBTs with 254 GHz f
1999; Institution of Engineering and Technology; Volume: 35; Issue: 7 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresD. Mensa, Q. Lee, James Guthrie, S. Jaganathan, M.J.W. Rodwell,
Tópico(s)Semiconductor materials and devices
ResumoThe authors report the simultaneous achievement of record current gain cutoff frequency f/sub /spl tau// and high power gain cutoff frequency f/sub max/ in a transferred-substrate HBT. The device parasitics are examined, and inferences made about the relative value of various approaches toward further improvements in f/sub /spl tau// and f/sub max/. Transferred-substrate HBTs with record f/sub /spl tau// of 254 GHz are reported.
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