MESFET fabrication on MOCVD grown Hg1-xCdxTe
1990; Institution of Engineering and Technology; Volume: 26; Issue: 4 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresPatrick W. Leech, P.J. Gwynn, Geoffrey N. Pain, N. Petkovic, J. Will Thompson,
Tópico(s)Nanowire Synthesis and Applications
ResumoThe fabrication of the first MESFET structures on Hg1-xCdxTe is reported using MOCVD grown layers on GaAs substrates. The 6µm gate devices exhibited a room temperature transconductance of 1.0mS/mm and pinch off voltage of − 4.0V. The Schottky barrier characteristics of the devices were critically dependent on the stoichiometric x ratio of the Hg1-xCdxTe with diode formation evident only at x > 0.5.
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