Enhancement-mode Ga 2 O 3 wrap-gate fin field-effect transistors on native (100) β -Ga 2 O 3 substrate with high breakdown voltage
2016; American Institute of Physics; Volume: 109; Issue: 21 Linguagem: Inglês
10.1063/1.4967931
ISSN1520-8842
AutoresKelson D. Chabak, Neil Moser, Andrew J. Green, Dennis E. Walker, Stephen E. Tetlak, Eric R. Heller, Antonio Crespo, Robert Fitch, Jonathan P. McCandless, Kevin Leedy, M. Baldini, G. Wagner, Zbigniew Galazka, Xiuling Li, Gregg H. Jessen,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoSn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.
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