Multi‐resonant gate drive circuit of isolating‐gate GaN HEMTs for tens of MHz
2016; Institution of Engineering and Technology; Volume: 11; Issue: 3 Linguagem: Inglês
10.1049/iet-cds.2016.0244
ISSN1751-8598
AutoresFumiya Hattori, Hirokatsu Umegami, Masayoshi Yamamoto,
Tópico(s)Advanced DC-DC Converters
ResumoIET Circuits, Devices & SystemsVolume 11, Issue 3 p. 261-266 Research ArticleFree Access Multi-resonant gate drive circuit of isolating-gate GaN HEMTs for tens of MHz Fumiya Hattori, Corresponding Author Fumiya Hattori hattori@powerele-academy.co.jp Department of Electronic Function Systems Engineering, Shimane University Matsue, Matsue, JapanSearch for more papers by this authorHirokatsu Umegami, Hirokatsu Umegami Department of Electronic Function Systems Engineering, Shimane University Matsue, Matsue, JapanSearch for more papers by this authorMasayoshi Yamamoto, Masayoshi Yamamoto Department of Electronic Function Systems Engineering, Shimane University Matsue, Matsue, JapanSearch for more papers by this author Fumiya Hattori, Corresponding Author Fumiya Hattori hattori@powerele-academy.co.jp Department of Electronic Function Systems Engineering, Shimane University Matsue, Matsue, JapanSearch for more papers by this authorHirokatsu Umegami, Hirokatsu Umegami Department of Electronic Function Systems Engineering, Shimane University Matsue, Matsue, JapanSearch for more papers by this authorMasayoshi Yamamoto, Masayoshi Yamamoto Department of Electronic Function Systems Engineering, Shimane University Matsue, Matsue, JapanSearch for more papers by this author First published: 16 January 2017 https://doi.org/10.1049/iet-cds.2016.0244Citations: 13AboutSectionsPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract Research of power supplies for megahertz (MHz) class applications such as a semiconductor manufacturing apparatus, induction heater and wireless transfer is carried out. A liner amplifier is generally used for MHz class applications. The loss of the power devices on a liner amplifier is theoretically high. To reduce the loss, the class E and Φ2 inverters are proposed, and some of the resonant gate drive circuits (GDC) are utilised at those of the gate port. However, the control signal of the GDC becomes complicated due to the additional switches. Moreover, the switches in the GDC perform the hard-switching, and the drive loss can thus be increased. In this study, a multi-resonant gate drive circuit is proposed, and its design method is introduced. It can generate the trapezoidal wave gate-to-source voltage with the simple control signal, and zero voltage switching operation is achieved at the switches of the gate drive circuit. First, its operation is experimentally verified. Secondly, the drive loss is also compared with that of the conventional circuit. Furthermore, its operation with the class E inverter with a cascode GaN high-electron-mobility transistor (HEMT) is confirmed at the switching frequency 13.56 MHz. 1 Introduction GaN high-electron-mobility transistors (HEMTs) are promising devices for high frequency application since their input capacitor is by far lower than that of SiC and Si MOS FETs under the same performance conditions. Thus, it is expected that GaN HEMTs can be utilised at switching frequency beyond tens of megahertz (MHz) [1]. The high-frequency operation beyond MHz is usually achieved for applications such as a plasma generator, induction heating, and wireless transfer [1-6]. A liner amplifier is generally used for those applications. However, the losses at the power devices are theoretically high. Therefore, the size of the cooling system increases and the volume of the total system gains larger. High efficiency amplifiers such as class E and Φ2 inverters have been proposed, and realised much lower loss at power devices by soft-switching techniques in the high-frequency region [7-14]. The duty ratio of the switching devices is normally fixed to 0.5 or less. However, the power dissipation Ploss at the gate port of a switch becomes higher. For instance, The Ploss is in proportional to the gate charge Qg, auxiliary power supply voltage Vg and switching frequency f. This causes higher Ploss in the high-frequency region. Thus, several resonant gate drive circuits (GDC) shown in Fig. 2 are proposed. The topology (a) in Fig. 2 is composed of inductors Lai, Lao, capacitors Cao, Cap, and input capacitor Ciss, and can generate the sine wave voltage to the gate-to-source (GS) by use of single switch Qac. The gate drive loss (GDL) is lower than that of Fig. 1, thanks to not only resonant circuit but also the soft-switching operation at the switch Qac. The topology (b) in Fig. 2 is composed of a p-channel and n-channel (pch/nch) MOS FETs, two diodes, the resonant inductor Lbr1 and input capacitor Ciss [15]. The pch/nch are generally called totem-pole driver. The two diodes are installed to clamp the GS voltage and generate the trapezoidal wave voltage at the GS. The GDL is also lower than that of Fig. 1. The topology (c) in Fig. 2 is composed of two totem-pole drivers and a resonant inductor Lcr1 [16]. The additional totem-pole driver is used to clamp the GS voltage and generate the trapezoidal wave GS voltage. The GDL is also lower than that of Fig. 1. The topology (d) in Fig. 2 is composed of a full-bridge structure, resonant inductor Ldr1, and damping resistor Rd[17]. Likewise, this topology shows the lower GDL than that of Fig. 1. The topology (e) in Fig. 2 has been introduced with the multi-resonant network using the fundamental and third harmonics of the switching frequency, which is called as class Φ2 inverter [18]. This also realises the trapezoidal wave GS voltage with the single switch Qs, and shows the lower GDL than that of Fig. 1. Fig. 1Open in figure viewerPowerPoint Conventional gate drive circuit Fig. 2Open in figure viewerPowerPoint Resonant gate drive circuit(a) Class E inverter, (b) Resonant MOSFET gate driver with efficient energy recovery, (c) Resonant gate drive circuit with reduced MOSFET switching and gate losses, (d) Resonant gate-drive circuit capable of high-frequency and high-efficiency operation, (e) Class Φ2 inverter Now, let us discuss the waveform of the GS and the number of switches. The sine wave GS voltage cannot quickly turn the switch on, compared with the trapezoidal wave GS voltage. With the single switch as a cause, we have to consider regarding the timing to power up the axillary power voltage Vin or VA. It might make the GS complicated. For instant, the start-up circuit might be required to prevent from the short circuit of the main circuit switch. The switches of the totem-pole driver shown in Figs. 2b–d do not perform the soft-switching. It leads more loss in the high frequency region. Moreover, they require some special control signal to drive the totem-pole driver. It could be difficult to adjust its time duration of the short signal to drive their switches in very high frequency region, since its time can be several nanosecond or less. The components for making the special signal might be needed. In summary, all following the conditions are required for the GDC in high frequency region. Lower GDL. Trapezoidal wave GS voltage. No start-up circuit. Soft-switching operation at the totem-pole driver. Simple control signal. However, the conventional resonant GDC cannot meet all the above conditions. In this paper, a resonant gate drive circuit using multi-resonant network with a totem-pole driver is proposed, which realised all the above conditions. Our idea basically comes from the multi-resonant network of class Φ2 inverter. It does not directly use the peak gain at the fundamental and third harmonics of the switching frequency in the design, but, by adjusting the GS voltage gain, the trapezoidal wave GS voltage can be generated. In the next section, the proposed circuit with the totem-pole driver for generating the trapezoidal wave GS voltage is presented. Section 3 discusses the design method of the proposed circuit. Section 4 presents the simulation and experimental results of the proposed circuit with a GaN HEMT at the switching frequency 13.56 MHz. Section 5 describes the GDL comparison between the conventional circuit shown in Fig. 1 and proposed circuits at 13.56 MHz. Finally, in Section 6, the experiment is executed with the prototype of the class E inverters at 13.56 MHz. 2 Multi-resonant gate drive circuit with totem-pole driver 2.1 Gate drive circuit for new drive method A proposed GDC is depicted in Fig. 3. This GDC is composed of inductors Lr1, Lr2, a capacitor Cr1, and an input capacitor Ciss of a main switch Qm. The totem-pole driver Q1 and Q2 are an amplifier for the control signal to drive the main switch Qm. Owing to the totem-pole driver Q1 and Q2, the proposed circuit does not need the start-up circuit for preventing from the short circuit at the main circuit. Fig. 3Open in figure viewerPowerPoint Proposed circuit with multi-resonant network The concept of the new driving idea is described in Fig. 4. By tuning the GS voltage gain, the trapezoidal wave GS voltage vgs is obtained at the GS of the switch Qm. Its gain is not completely tuned the fundamental and third harmonics of the switching frequency since the GS voltage becomes much larger. The resonance point of the proposed circuit has to be shifted to the left and/or right side from the fundamental and third harmonics of the switching frequency. In especial, the zero voltage switching (ZVS) operation is done on the totem-pole driver by shifting resonance point to the left side of the fundamental and third harmonics of the switching frequency. The reduction of the GDL is therefore expected. Fig. 4Open in figure viewerPowerPoint Concept of the proposed circuit 2.2 Design of gate drive circuit In this section, design of the proposed circuit is explained. Their component parameters are derived by calculating the impedance Zin shown in Fig. 5. The impedance Zin is given as: (1) Fig. 5Open in figure viewerPowerPoint Impedance of proposed circuit Equation (1) can be expressed as: (2) where: (3) Solving the two positive roots of the quartic, the following equation is derived. (4) where: (5) Setting the condition, by introducing ω1 = k1ωs and ω3= k2ωs, where ωs is 2πfs (fs: switching frequency), k1 and k2 are introduced as the gain adjustment coefficient to shift the resonant point of the fundamental and third harmonics to the left and/or right sides. We then reach to the following equations: (6) From those equations, each value for the proposed circuit is derived as. (7) (8) (9) (10) (11) 2.3 Simulation results Simulation with the circuit simulator PSIM is ideally performed for the proposed circuit. In this paper, we are going to use class E inverter as the main circuit. Generally speaking, the duty of the class E inverter is fixed to 0.5. Hence, the duty ratio (control signal) is fixed to 0.5 in the simulation. The output capacitors of the switches Q1 and Q2 are Cp1 = 70 pF and Cp2 = 70 pF, respectively. Our target is first the GaN HEMT on a soft-switching converter with ZVS at turn-on and off. Thus, the mirror effect of the gate-to-drain capacitor, which is generated at the switching device, can practically be ignored. The value of the input capacitor Ciss is thus fixed in the simulation. the Simulation parameters and results are described in Table 1 and Fig. 6, respectively. We chose each of the parameter for the switching frequency fs = 13.56 MHz, as the first step. As can be seen in Fig. 6a, the trapezoidal wave is generated at the GS by tuning the GS voltage gain. The Fig. 6b shows the entire drain-to-source voltage and current waves of the switch Q1. Fig. 6c describes the zooming drain-to-source voltage and current of the switch Q1 at the turn-on. The ZVS operation is confirmed at the turn-on (likewise, this is confirmed on the switch Q2). The zooming drain-to-source voltage and current are shown in the Fig. 6d of the switch Q1 at the turn-off. The current steeply falls, and voltage rises without the overlap. Accordingly, the soft-switching is also realised on the switch Q1 at the turn-off (likewise, this is confirmed on the switch Q2). Thus, the loss reduction would be expected on the totem-pole driver. Table 1. Simulation parameters Value input voltage Vdc 8 V resonant inductor Lr1 168 nH resonant inductor Lr2 180 nH resonant capacitor Cr1 104 pF input capacitor Ciss 1060 pF gain coefficient k1, k2 0.85, 2.85 switching frequency fs 13.56 MHz duty ratio D 0.5 Fig. 6Open in figure viewerPowerPoint Simulation results(a) GS waveform, (b) Entire waveform, (c) Zooming turn-on waveform of (b), (d) Zooming turn-off waveform of (b) 2.4 Experimental results The first fabricated prototype is shown in Fig. 7. A GaN-HEMT, TPH3006PS supplied from Transphorm Inc. and a gate driver, LTC4440 from Linear Technology Corp. are selected for the totem-pole driver. The GaN HEMT is a key device for the high frequency operation, and its research has been carried out in recent years [19-26]. However, the most of the GaN HEMT has the non-isolating-gate structure. Therefore, we first chose the GaN HEMT supplied from Transphorm Inc., which shows the isolating-gate structure with the cascode connection [27-31]. The experimental circuit parameters are depicted in Table 2. They are different from the simulation parameters due to the parasitic parameters of the PCB, the LTC4440, and package from the GaN HEMT. The resistor 50 Ω is connected to the drain-to-source of the GaN-HEMT without the power supply, and this simulates no voltage condition such as the soft-switching condition. Fig. 7Open in figure viewerPowerPoint Prototype of the proposed circuit Table 2. Experiment parameters Value drive voltage Vdc 8 V resonant inductor Lr1 173.7 nH resonant inductor Lr2 207.7 nH resonant capacitor Cr1 196.4 pF input capacitor Ciss 1060 pF switching frequency fs 13.56 MHz duty ratio D 0.5 Experimental results are shown in Fig. 8. The GS voltage is clamped without the additional diodes and switches, and becomes the trapezoidal wave. In the higher frequency region, it is expected that the resonant inductors Lr1 and Lr2 can be replaced the air inductor or parasitic inductor of the wire. It is thus suggested that the GDC can be simpler. Fig. 8Open in figure viewerPowerPoint Experimental results A waveform during start-up is shown in Fig. 9. The overshoot is slightly confirmed. The value is approximately 0.8 V, assuming that the desirable peak value of the GS voltage is 8 V. This can be smaller by adjusting the resistor such as the on-resistor of the totem-pole driver and parasitic resistor of the passive components and switching device in the GCS. Fig. 9Open in figure viewerPowerPoint Waveform during start-up 3 Drive loss comparison DL comparison is carried out here. The GDC shown in Fig. 1 is selected for comparing the DL. In the comparison, the positive and negative power supply are prepared for the driving the GaN HEMT. This is because the positive and negative voltage can be used for driving the class E inverter in the next section. The gate resistor Rg is selected 3.33 Ω with the three parallel connection of 10 Ω due to the allowable current of the gate driver, LTC4440. First, the experimental waveforms and results are shown in Figs. 10a and b, respectively. The GS voltage of the proposed circuit rises up faster than that of the conventional circuit. This would be effective to fully enhance the GaN HEMT and reduce the loss of the main circuit in term of the on-resistor. As be confirmed in Fig. 11, the DL of the proposed circuit is 80 mW less than that of conventional thank to the resonance phenomenon and soft-switching operation of the totem-pole driver. This influence would be clearer in the higher frequency region. Fig. 10Open in figure viewerPowerPoint Experimental waveform(a) Waveform of conventional gate driver with gate resistor 3.33Ω, (b) Waveform of the proposed drive circuit with parameters from Table 2 Fig. 11Open in figure viewerPowerPoint Drive loss comparison 4 Introduction into class E inverter The proposed circuit is now installed into the class E inverter depicted in Fig. 12. The fabricated prototype and parameters of the class E inverter are shown in Fig. 12 and Table 3, respectively. The left-hand side part shown in Fig. 13 is the area to generate the pulse and the drive voltage. To easily take the duty 0.5, the positive and negative power supply is directly applied to drive IC, LTC4440, in the experiment. The experiment waveforms of the drain-to-source voltage vds, GS voltage vgs and output voltage vout are shown in Fig. 14. The switch voltage stress is about four times of the input voltage, and the ZVS operation is carried out at the switch Qe. Accordingly, it is confirmed that the class E inverter works with the proposed GDC. However, the ringing is confirmed on the GS voltage vgs. It is suggested that this ringing is from PCB pattern since the PCB pattern of the gate driver is close to the main pattern. Therefore, we have to improve the PCB pattern as a future work. Fig. 12Open in figure viewerPowerPoint Configuration of the class E inverter Fig. 13Open in figure viewerPowerPoint First prototype for new drive method Fig. 14Open in figure viewerPowerPoint Experimental results of the class E inverter Table 3. Parameters for class E inverter Value input voltage Vdc 75 V input capacitor Cin 10 μF input inductor Li 945 nH parallel capacitor Cp 50 pF resonant inductor Lo 1272 nH resonant capacitor Co 421 pF load 50 Ω drive voltage Vdc ±4 V resonant inductor Lr1 130.7 nH resonant inductor Lr2 172.5 nH resonant capacitor Cr1 171.8 pF switching frequency fs 13.56 MHz duty ratio D 0.5 5 Conclusion In this paper, a multi-resonant gate drive circuit with a totem-pole driver was introduced. First, the issues of the conventional and resonant GDC were mentioned. The conventional circuit with the resistor has an issue in the high frequency due to the GDL. On the other hand, the resonant GDCs show the lower loss than the conventional GDC, however, the conventional resonant GDC cannot meet the all following condition which is required in the high frequency operation. Lower GDL. Trapezoidal wave GS voltage. No start-up circuit. Soft-switching operation at the totem-pole driver. Simple control signal. Second, we introduced a multi-resonant GDC for the high frequency region, which meets the above conditions. Its design method was also described. Third, in the simulation, it was confirmed that the proposed circuit realised the GS voltage of the trapezoidal waveform at 13.56 MHz. The complicated control signal for the switches in the GDC is not needed. Accordingly, the circuit for making control signal becomes simpler. Moreover, the ZVS operation at the totem-pole driver was also validated. Furthermore, the GS voltage during start-up is confirmed, and the overshoot is slightly generated. The value is approximately 0.8 V, assuming that the desirable peak value of the GS voltage is 8 V. This can be smaller by adjusting the resistor such as the resistor in the GCS. Fourth, its validity was experimentally verified. There was some difference between the design and experimental parameter. This was because the parasitic parameter from the PCB, driver IC, package of the GaN HEMT. However, the waveform such as simulation was confirmed. As the future work, we have to take care of them for design. Here, the GDL was also compared with the gate drive circuit. From the experiment, the proposed GDC could reduce the GDL. It would be superior in the higher frequency region. Finally, the proposed GDC was applied to the class E inverter, and its operation was experimentally confirmed. The ringing was seen in the experimental waveform since the area providing the drive voltage and control signal is near the main circuit. In the future work, the PCB board should be modified. However, the operation of the E class inverter was executed with the proposed GDC and hence, the proposed GDC can drive the high frequency inverter and would have the superiority for the high frequency. 6 References 1Long, Y., Zhang, W., Blalock, B., et al.: 'A 10-MHz resonant gate driver design for LLC resonant DC-DC converters using GaN devices'. Proc. IEEE Applied Power Electronics Conf. 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