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Insulated gate field effect transistor integrated circuits with silicon gates

1969; Institute of Electrical and Electronics Engineers; Volume: 16; Issue: 2 Linguagem: Inglês

10.1109/t-ed.1969.16611

1557-9646

Federico Faggin, Thomas Klein, L. Vadasz,

Silicon and Solar Cell Technologies

The Silicon Gate Technology is a new approach to fabricating insulated gate field effect transistor circuits, in which the metal gate electrode is replaced by a doped, silicon electrode. The work function difference between the gate electrode and semiconductor bulk will now be determined by the doping of the gate electrode. This leads to normally off p-channel devices with threshold voltages typically between 1.1 v and 2.5 v on material with 1000A gate oxide. It is a self-aligned gate structure and has a buried-gate electrode which allows crossover of gate regions and closer spacing of source-drain contact. The fabrication needs 4 masking steps and was found to be compatible with existing planar technology.