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GaAs solid state detectors for high energy physics

1992; American Institute of Physics; Linguagem: Inglês

10.1063/1.43346

1935-0465

C. M. Buttar, J.G. Ashman, S.P. Beaumont, R. Bertin, C.N. Booth, C. Capiluppi, L. Carraresi, F. Cindolo, M. Colocci, F.H. Combley, S. D’Auria, C. Del Papa, M. Doḡru, M. Edwards, F. Fiori, F. Foster, A. Francescato, R. Gray, G. Hill, Yaonan Hou, P.A. Houston, G. Hughes, B.K. Jones, John Lynch, B. Lisowsky, J. Matheson, F. Nava, Marco Nuti, V. O’Shea, P.G. Pelfer, C. Raine, João Santana, I.J. Saunders, P. Seller, Karthik Shankar, P. Sharp, I.O. Skillicorn, T. Sloan, K. M. Smith, I. Tartoni, I. ten Have, R.M. Turnbull, U. Vanni, A. Vinattieri, A. Zichichi,

Advanced Semiconductor Detectors and Materials

Progress in the development of detectors based on semi‐insulating GaAs for experiments at future hadron colliders is presented. Effects of neutron and gamma irradiation at the levels of 1014 ncm−2 and 20 MRad respectively, have been shown to be small. Testbeam studies have shown that microstrip detectors can detect minimum ionizing particles with a good signal to noise ratio despite having low charge collection efficiencies. The problem of charge loss in the detectors is now better understood and new detectors have shown improved charge collection efficiencies.