Synthesis and Physicochemical Properties of Piceno[4,3- b :9,10- b ′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors
2017; American Chemical Society; Volume: 2; Issue: 1 Linguagem: Inglês
10.1021/acsomega.7b00015
ISSN2470-1343
AutoresKeita Hyodo, Ryota Toyama, Hiroki Mori, Yasushi Nishihara,
Tópico(s)Conducting polymers and applications
ResumoEfficient synthesis and characterization of several piceno[4,3-b:9,10-b']dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported. PiDT derivatives, with extended π-electron systems, showed high air stability due to their deep highest occupied molecular orbital energy levels (around -5.6 eV). OFET devices based on 2,11-dioctylated PiDT (C8-PiDT) showed excellent hole mobility, as high as 2.36 cm2 V-1 s-1. Their structure-property relationships were investigated by X-ray diffraction and atomic force microscopy.
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