Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
1999; Cambridge University Press; Volume: 4; Issue: 1 Linguagem: Inglês
10.1557/s1092578300000636
ISSN1092-5783
AutoresJ. Dalfors, J. P. Bergman, P. O. Holtz, B. Ḿonemar, Hiroshi Amano, Isamu Akasaki,
Tópico(s)ZnO doping and properties
ResumoPhotoluminescence spectra were measured for 100 Å wurtzite GaN AlGaN modulation doped quantum wells. Three well-resolved peaks originate from the quantum well. The theoretically calculated confinement energies have been compared to the experimental energy positions and found to be in good agreement with the data, assuming that the piezoelectric field is largely screened by the electron gas. The highest energy transition may originate from the Fermi edge, consistent with the temperature dependence of the photoluminescence. Decay times for the different transitions indicate that the photoexcited holes are localized.
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