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ELDRS Susceptibility of Bipolar Transistors and Integrated Circuits During Low Temperature Irradiation

2017; Institute of Electrical and Electronics Engineers; Linguagem: Inglês

10.1109/tns.2017.2677261

1558-1578

Alexander S. Bakerenkov, Viacheslav S. Pershenkov, Vladislav A. Felitsyn, A S Rodin, Vitaly A. Telets, V.V. Belyakov, V.V. Shurenkov,

VLSI and Analog Circuit Testing

The enhanced low dose rate sensitivity (ELDRS) susceptibility of 2N2222 bipolar transistors and LM111 voltage comparators was investigated during irradiation at low temperature and compared with corresponding room-temperature data. The possible physical mechanism of the ELDRS effect in bipolar transistors and integrated circuits during irradiation at room temperature and low temperature was described. A device that is ELDRS-free at room temperature suffers from this effect during irradiation at low temperature.