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Thin-film Cu(In,Ga)(Se,S) 2 -based solar cell with (Cd,Zn)S buffer layer and Zn 1− x Mg x O window layer

2017; Wiley; Volume: 25; Issue: 6 Linguagem: Inglês

10.1002/pip.2879

1099-159X

Jakapan Chantana, Takuya Kato, H. Sugimoto, Takashi Minemoto,

Copper-based nanomaterials and applications

Progress in Photovoltaics: Research and ApplicationsVolume 25, Issue 6 p. 431-440 Research Article Thin-film Cu(In,Ga)(Se,S)2-based solar cell with (Cd,Zn)S buffer layer and Zn1−xMgxO window layer Jakapan Chantana, Corresponding Author Jakapan Chantana jakapan@fc.ritsumei.ac.jp orcid.org/0000-0002-5711-4979 Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga, 525-8577 Japan Correspondence Jakapan Chantana, Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan. E-mail: jakapan@fc.ritsumei.ac.jpSearch for more papers by this authorTakuya Kato, Takuya Kato Atsugi Research Center, Solar Frontier K. K., Atsugi, Kanagawa, 243-0206 JapanSearch for more papers by this authorHiroki Sugimoto, Hiroki Sugimoto Atsugi Research Center, Solar Frontier K. K., Atsugi, Kanagawa, 243-0206 JapanSearch for more papers by this authorTakashi Minemoto, Takashi Minemoto Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga, 525-8577 JapanSearch for more papers by this author Jakapan Chantana, Corresponding Author Jakapan Chantana jakapan@fc.ritsumei.ac.jp orcid.org/0000-0002-5711-4979 Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga, 525-8577 Japan Correspondence Jakapan Chantana, Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan. E-mail: jakapan@fc.ritsumei.ac.jpSearch for more papers by this authorTakuya Kato, Takuya Kato Atsugi Research Center, Solar Frontier K. K., Atsugi, Kanagawa, 243-0206 JapanSearch for more papers by this authorHiroki Sugimoto, Hiroki Sugimoto Atsugi Research Center, Solar Frontier K. K., Atsugi, Kanagawa, 243-0206 JapanSearch for more papers by this authorTakashi Minemoto, Takashi Minemoto Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga, 525-8577 JapanSearch for more papers by this author First published: 02 March 2017 https://doi.org/10.1002/pip.2879Citations: 33Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract (Cd,Zn)S buffer layer and Zn1−xMgxO window layer were investigated to replace the traditional CdS buffer layer and ZnO window layer in Cu(In,Ga)(Se,S)2 (CIGSSe)-based solar cell. (Cd,Zn)S with band-gap energy (Eg) of approximately 2.6 eV was prepared by chemical bath deposition, and Zn1−xMgxO films with different [Mg]/([Mg] + [Zn]) ratios, x, were deposited by radio frequency magnetron co-sputtering of ZnO and MgO. The estimated optical Eg of Zn1−xMgxO films is linearly enhanced from 3.3 eV for pure ZnO (x = 0) to 4.1 eV for Zn0.6Mg0.4O (x = 0.4). The quality of the Zn1−xMgxO films, implied by Urbach energy, is severely deteriorated when x is above 0.211. Moreover, the temperature-dependent current density-voltage characteristics of the CIGSSe solar cells were conducted for the investigation of the heterointerface recombination mechanism. The external quantum efficiency of the CIGSSe solar cell with the (Cd,Zn)S buffer layer/Zn1−xMgxO window layer is improved in the wavelength range of 320–520 nm. Therefore, a gain in short-circuit current density up to about 5.7% was obtained, which is higher conversion efficiency of up to around 5.4% relative as compared with the solar cell with the traditional CdS buffer layer/ZnO window layer. The peak efficiency of 19.6% was demonstrated in CIGSSe solar cell with (Cd,Zn)S buffer layer and Zn1−xMgxO window layer, where x is optimized at 0.211. Copyright © 2017 John Wiley & Sons, Ltd. Citing Literature Volume25, Issue6June 2017Pages 431-440 RelatedInformation