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Microhardness, Structure, and Morphology of Primary Enamel after Phosphoric Acid, Self-Etching Adhesive, and Er:YAG Laser Etching

2017; Hindawi Publishing Corporation; Volume: 2017; Linguagem: Inglês

10.1155/2017/7634739

ISSN

1687-9392

Autores

María del Carmen Zoila Alcantara-Galeana, Rosalía Contreras‐Bulnes, Laura Emma Rodríguez‐Vilchis, Manuel Espinosa-Pesqueira, Cecilia Carlota Barrera Ortega, Itzel Monserrat López-Hurtado, Adriana Fernández-Bobadilla,

Tópico(s)

Endodontics and Root Canal Treatments

Resumo

Background . Phosphoric acid is the traditional etching agent; self-etching adhesives and Er:YAG laser are alternative methods. Knowledge of deciduous enamel etching is required. Aim . To evaluate primary enamel microhardness, structure, and morphology after phosphoric acid, self-etching, and Er:YAG laser etching. Design . Seventy primary incisors were assigned to five groups ( n = 14 ): I (control), II (35% phosphoric acid), III (self-etching adhesive), IV (Er:YAG laser at 15 J/cm 2 ), and V (Er:YAG laser at 19.1 J/cm 2 ). Microhardness was evaluated by Vickers indentation. Chemical composition was analyzed by energy dispersive X-ray spectroscopy and morphological changes by scanning electron microscopy. One-way ANOVA, Kruskal–Wallis, Mann–Whitney U , and Pearson bivariate correlation were employed ( α = 0.05 ). Results . Vickers microhardness showed differences and no correlation with Ca/P ratio. Group II showed differences in carbon, oxygen, and phosphorus atomic percent and group V in Ca/P ratio. Morphological changes included exposed prisms, fractures, craters, and fusion. Conclusions . Enamel treated with phosphoric acid showed different chemical characterization among groups. Self-etching and Er:YAG laser irradiation at 19.1 J/cm 2 showed similar microhardness and chemical characterization. Er:YAG laser irradiation at 15 J/cm 2 maintained microhardness as untreated enamel. Er:YAG laser irradiation at 19.1 J/cm 2 enhanced mineral content. Morphological retentive changes were specific to each type of etching protocol.

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