Portal de Periódicos da CAPES

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

2017; American Institute of Physics; Volume: 110; Issue: 20 Linguagem: Inglês

10.1063/1.4983352

1520-8842

Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Andrew A. Allerman, Michael W. Moseley, Andrew Armstrong, Siddharth Rajan,

Ga2O3 and related materials

We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact and obtained a low contact resistance of ρc = 4.8 × 10−5 Ω cm2 on n-Al0.75Ga0.25 N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2 × 1018 cm−3 to 1.5 × 1019 cm−3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25 N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs and provides a structural design towards high power deep-UV emitters.