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Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates

2017; Wiley; Volume: 214; Issue: 9 Linguagem: Inglês

10.1002/pssa.201600764

1862-6319

Giuseppe Greco, Salvatore Di Franco, F. Iucolano, Filippo Giannazzo, Fabrizio Roccaforte,

Semiconductor materials and devices

physica status solidi (a)Volume 214, Issue 9 1600764 Original Paper Temperature dependence of the I–V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates G. Greco, Corresponding Author G. Greco giuseppe.greco@imm.cnr.it CNR-IMM, Strada VIII, n. 5 − Zona Industriale, 95121 Catania, Italy Corresponding author: e-mail giuseppe.greco@imm.cnr.it, Phone: +39 0955968243, Fax: +3909559680211Search for more papers by this authorS. Di Franco, S. Di Franco CNR-IMM, Strada VIII, n. 5 − Zona Industriale, 95121 Catania, ItalySearch for more papers by this authorF. Iucolano, F. Iucolano STMicroelectronics, Stradale Primosole 50, 95121 Catania, ItalySearch for more papers by this authorF. Giannazzo, F. Giannazzo CNR-IMM, Strada VIII, n. 5 − Zona Industriale, 95121 Catania, ItalySearch for more papers by this authorF. Roccaforte, F. Roccaforte CNR-IMM, Strada VIII, n. 5 − Zona Industriale, 95121 Catania, ItalySearch for more papers by this author G. Greco, Corresponding Author G. Greco giuseppe.greco@imm.cnr.it CNR-IMM, Strada VIII, n. 5 − Zona Industriale, 95121 Catania, Italy Corresponding author: e-mail giuseppe.greco@imm.cnr.it, Phone: +39 0955968243, Fax: +3909559680211Search for more papers by this authorS. Di Franco, S. Di Franco CNR-IMM, Strada VIII, n. 5 − Zona Industriale, 95121 Catania, ItalySearch for more papers by this authorF. Iucolano, F. Iucolano STMicroelectronics, Stradale Primosole 50, 95121 Catania, ItalySearch for more papers by this authorF. Giannazzo, F. Giannazzo CNR-IMM, Strada VIII, n. 5 − Zona Industriale, 95121 Catania, ItalySearch for more papers by this authorF. Roccaforte, F. Roccaforte CNR-IMM, Strada VIII, n. 5 − Zona Industriale, 95121 Catania, ItalySearch for more papers by this author First published: 03 March 2017 https://doi.org/10.1002/pssa.201600764Citations: 4Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract The forward current–voltage (I–V) characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures have been studied in this work. The electrical characteristics exhibited a strongly non-ideal behavior that could not be described by the thermionic emission theory. Hence, we used a "two diodes model," considering both the presence of the Ni/AlGaN barrier and of a second barrier height at the AlGaN/GaN heterojunction. Capacitance–voltage (C–V) measurements enabled us to experimentally determine the properties of the two dimensional electron gas (2DEG) and, hence, of the second barrier at the AlGaN/GaN interface. Following this approach, the anomalous I–V curves could be explained. Moreover, the value of the barrier height at zero-electric field (flat-band barrier height) was introduced and determined with this procedure, and resulted in a good agreement with literature data based on photoemission measurements. This approach provides a valid procedure for an accurate determination of the barrier height in AlGaN/GaN heterostructures, and the results can have useful implications for the fabrication of AlGaN/GaN HEMTs devices. Citing Literature Volume214, Issue9September 20171600764 RelatedInformation