Measurement of the Auger recombination rate in p -type 0.54 eV GaInAsSb by time-resolved photoluminescence
2003; American Institute of Physics; Volume: 83; Issue: 16 Linguagem: Inglês
10.1063/1.1621455
ISSN1520-8842
AutoresС. Г. Аникеев, D. Donetsky, Gregory Belenky, Serge Luryi, C. A. Wang, J.M. Borrego, G. Nichols,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoAuger recombination in p-type GaSb, InAs, and their alloys is enhanced due to the proximity of the band gap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. We report electron lifetime measurements in a p-type 0.54 eV GaInAsSb alloy, commonly used in a variety of infrared devices. We have studied a series of double-capped heterostructures with varied thicknesses and doping levels, grown by organometallic vapor phase epitaxy on GaSb substrates. The Auger coefficient value of 2.3×10−28 cm6/s is determined by analyzing the photoluminescence decay constants with a systematic separation of different recombination mechanisms.
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