Caracterizacion de capacitores MOS basados en películas de óxido de hafnio obtenidas a 150◦C
2016; Mexican Society of Physics; Volume: 62; Issue: 6 Linguagem: Inglês
ISSN
2683-2224
AutoresSonia Cerón, José A. D. Hernández, Miguel A. Domínguez,
Tópico(s)Semiconductor materials and interfaces
ResumoThe fabrication and characterization of MOS capacitors with Hafnium Oxide as dielectric obtained at 150$^\circ$C is described. The Hafnium Oxide thin films were obtained by spin-coating. The MOS capacitors were characterized employing measurements of capacitance vs. voltage, capacitance vs. frequency and current vs. voltage. The results demonstrate the feasibility of Hafnium Oxide film as a dielectric in electronic devices.
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