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Determination of low carbon concentration in Czochralski-grown Si crystals for solar cells by luminescence activation using electron irradiation

2017; Institute of Physics; Volume: 56; Issue: 7 Linguagem: Inglês

10.7567/jjap.56.070305

1347-4065

Hirotatsu Kiuchi, Michio Tajima, Fumito Higuchi, Atsushi Ogura, Nobuhito Iida, Shoji Tachibana, Isao Masada, Eiichi Nishijima,

Integrated Circuits and Semiconductor Failure Analysis

We attempted the quantification of carbon concentration in Czochralski-grown Si crystals for solar cells by luminescence activation in the concentration range lower than the detection limit of IR absorption spectroscopy. A positive correlation was found between the relative intensity of the C-line and the substitutional carbon (Cs) concentration determined by IR absorption in the low 1015 cm−3 range. The detection limit was estimated to be approximately 5 × 1012 cm−3. We measured and compared the Cs concentrations in the wafers sliced from ingots grown under different conditions. The variations in Cs concentrations in the respective ingots were consistent with the segregation effect.