Flux threshold of He-ion-beam induced nano-fuzz growth on hot tungsten below and above the displacement damage threshold energy

2014; Cambridge University Press; Volume: 2014; Linguagem: Inglês

ISSN

0003-0503

Autores

Hussein Hijazi, M. E. Bannister, Chad M. Parish, Harry M. Meyer, F. W. Meyer,

Tópico(s)

Integrated Circuits and Semiconductor Failure Analysis

Referência(s)