Portal de Periódicos da CAPES

Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO 2 (001) Anatase Thin Films

2017; American Chemical Society; Volume: 9; Issue: 27 Linguagem: Inglês

10.1021/acsami.7b03181

1944-8252

B. Gobaut, P. Orgiani, A. Sambri, Emiliano Di Gennaro, C. Aruta, F. Borgatti, V. Lollobrigida, D. Céolin, Jean‐Pascal Rueff, Regina Ciancio, Chiara Bigi, Pranab K. Das, Jun Fujii, Damjan Krizmancic, Piero Torelli, I. Vobornik, G. Rossi, F. Miletto Granozio, U. Scotti di Uccio, G. Panaccione,

Semiconductor materials and devices

We report the study of anatase TiO2(001)-oriented thin films grown by pulsed laser deposition on LaAlO3(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti3+-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti3+ electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti3+ only in a well-defined range of deposition pressure; outside this range, Ti3+ and the strength of the in-gap states are reduced.