In situ investigation of amorphous silicon/silicon nitride interfaces by infrared ellipsometry
1993; American Institute of Physics; Volume: 62; Issue: 22 Linguagem: Inglês
10.1063/1.109225
ISSN1520-8842
AutoresHajime Shirai, B. Drévillon, Razvigor Ossikovski,
Tópico(s)Silicon and Solar Cell Technologies
ResumoA detailed in situ study by infrared phase-modulated ellipsometry of interfaces between plasma-deposited amorphous silicon (a-Si:H) and silicon nitride (a-SiNx) is presented. The structure of the interface is affected by the deposition sequence. A behavior compatible with a sharp interface is observed when a-SiNx is deposited on top of a-Si:H, the underlayer material being very weakly influenced by the deposition of the overlayer. In contrast, a graded transition is observed when a-SiNx is deposited first. In the latter case, the infrared measurements directly reveal a nitrogen tail incorporated in the first monolayers of a-Si:H (10–20 Å thick). The formation mechanisms of the interfaces are discussed.
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