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Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths

2017; Optica Publishing Group; Volume: 4; Issue: 7 Linguagem: Inglês

10.1364/optica.4.000717

2334-2536

Fanglu Lu, Indrasen Bhattacharya, Hao Sun, Thai-Truong D. Tran, Kar Wei Ng, Gilliard N. Malheiros‐Silveira, Connie J. Chang-Hasnain,

Semiconductor Lasers and Optical Devices

Future expansion of computing capabilities relies on a reduction of energy consumption in silicon-based integrated circuits. A promising solution is to replace electrical wires with optical connections, for which a key component is a nanolaser that coherently emits into silicon-based waveguides to route information across a chip, in place of bulky off-chip devices. We report room temperature, sub-μm2 footprint, quantum-well-in-nanopillar lasers grown directly on silicon and silicon-on-insulator (SOI) substrates that emit within the silicon-transparent wavelength range under optical excitation. The laser wavelength is controlled by changing the InGaAs quantum well thickness and alloy composition, quite independent of lattice mismatch with the InP barrier, a unique property of the 3D core-shell growth mode. We achieve excellent luminescence yield and low continuous wave transparency power due to the well-passivated InGaAs/InP interfaces. These sub-μm2 footprint long-wavelength lasers could enable optoelectronic integration and photon routing with silicon waveguides on the technologically relevant SOI platform.