In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
2008; American Institute of Physics; Volume: 92; Issue: 2 Linguagem: Inglês
10.1063/1.2829586
ISSN1520-8842
AutoresEileen O’Connor, R. D. Long, K. Cherkaoui, Kevin Thomas, Francis Chalvet, Ian M. Povey, Martyn E. Pemble, Paul K. Hurley, Barry Brennan, G. Hughes, S. B. Newcomb,
Tópico(s)Ferroelectric and Negative Capacitance Devices
ResumoWe have studied an in situ passivation of In0.53Ga0.47As, based on H2S exposure (50–350°C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition of HfO2 using Hf[N(CH3)2]4 and H2O precursors. X-ray photoelectron spectroscopy revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H2S exposure temperatures. Transmission electron microscopy analysis demonstrates a reduction of the interface oxide between the In0.53Ga0.47As epitaxial layer and the amorphous HfO2 resulting from the in situ H2S passivation. The capacitance-voltage and current-voltage behavior of Pd∕HfO2∕In0.53Ga0.47As∕InP structures demonstrates that the electrical characteristics of samples exposed to 50°C H2S at the end of the metal-organic vapor-phase epitaxy In0.53Ga0.47As growth are comparable to those obtained using an ex situ aqueous (NH4)2S passivation.
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