Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes
2017; Institute of Physics; Volume: 10; Issue: 8 Linguagem: Inglês
10.7567/apex.10.081201
ISSN1882-0786
AutoresShohei Hayashi, T. Naijo, Tamotsu Yamashita, Masaki Miyazato, Mina Ryo, Hiroyuki Fujisawa, M. Miyajima, Junji Senzaki, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima, Hajime Okumura,
Tópico(s)Semiconductor materials and interfaces
ResumoStacking faults expanded by the application of forward current to 4H-SiC p–i–n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.
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