Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector
2017; Elsevier BV; Volume: 209; Linguagem: Inglês
10.1016/j.matlet.2017.08.052
ISSN1873-4979
AutoresYuting Qian, Daoyou Guo, Xuan Chu, Haoze Shi, Weijing Zhu, K. Wang, Xuanqi Huang, Hongde Wang, S.L. Wang, P.G. Li, X.H. Zhang, Weihua Tang,
Tópico(s)Advanced Photocatalysis Techniques
ResumoThe p-type high insulating thin films were obtained by doping Mg into β-Ga2O3. Thin films with various Mg concentrations were deposited on (0 0 0 1) c-plane Al2O3 substrate by radio frequency magnetron sputtering followed by post-annealing treatment. The crystal structure expanded due to the substitution of the trivalent Ga3+ with the divalent Mg2+ in a larger ion radius. The Fermi level (EF) of the Mg doped film is closer to the valence band, exhibiting a characteristic of weak p-type. The Mg doped Ga2O3 thin films were used to construct the metal/semiconductor/metal (MSM) structure, and the devices showed a high resistance (4.1 pA at 10 V), a high sensitivity (8.7 × 105%), a high responsivity (23.8 mA/W) and a short decay time (0.02 s) under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetector.
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