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Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition

2017; Elsevier BV; Volume: 3; Issue: 9 Linguagem: Inglês

10.1016/j.heliyon.2017.e00404

2405-8440

E. F. Moore, Joshua Jarrell, Lei R. Cao,

Semiconductor materials and devices

Deposition of heteroepitaxial diamond via microwave chemical vapor deposition has been performed on a 4H-SiC substrate using bias enhanced nucleation followed by a growth step. In future work, the diamond film will serve as a protective layer for an alpha particle sensor designed to function in an electrorefiner during pyroprocessing of spent fuel. The diamond deposition on the 4H-SiC substrate was carried out using a methane-hydrogen gas mixture with varying gas flow rates. The nucleation step was conducted for 30 minutes and provided sufficient nucleation sites to grow a diamond film on various locations on the substrate. The resulting diamond film was characterized using Raman spectroscopy exhibiting the strong Raman peak at 1332 cm-1. Scanning electron microscopy was used to observe the surface morphology and the average grain size of the diamond film was observed to be on the order of ∼2-3 μm.