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Review of recent advances in flexible oxide semiconductor thin-film transistors

2017; Taylor & Francis; Volume: 18; Issue: 4 Linguagem: Inglês

10.1080/15980316.2017.1385544

2158-1606

Jiazhen Sheng, Hyun‐Jun Jeong, Ki-Lim Han, TaeHyun Hong, Jin‐Seong Park,

Semiconductor materials and devices

This paper describes the recent advances in flexible oxide thin-film transistors (TFTs), one of the rapidly emerging technologies for the next-generation display applications. First, the paper focuses on the effect of the buffer layer over the plastic substrate, which significantly influences the electrical performance and stability of oxide TFTs. Then oxide semiconductor TFTs fabricated through atomic layer deposition among the various oxide semiconductor fabrication methods were reviewed due to their potential as high-performance flexible TFTs. Finally, the mechanical fatigue behaviors of the TFTs were investigated, including the various mechanical factors, such as the bending radius, cycles, and stress directions. Structural solutions for the TFT were also introduced, such as TFT design modification and the use of the neutral plane concept, to improve the mechanical durability.