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Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices

2018; Institute of Physics; Volume: 57; Issue: 4S Linguagem: Inglês

10.7567/jjap.57.04fn01

1347-4065

Danny Wan, Mauricio Manfrini, Adrien Vaysset, Laurent Souriau, Lennaert Wouters, Arame Thiam, Eline Raymenants, Şafak Sayan, Julien Jussot, Johan Swerts, Sébastien Couet, Nouredine Rassoul, Khashayar Babaei Gavan, Kristof Paredis, Cedric Huyghebaert, Monique Ercken, Christopher J. Wilson, D. Mocuta, Iuliana Radu,

Semiconductor materials and devices

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step toward the realization of a majority gate, even though further downscaling may be required. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications