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A 60-GHz SiGe BiCMOS Monostatic Transceiver for FMCW Radar Applications

2017; IEEE Microwave Theory and Techniques Society; Volume: 65; Issue: 12 Linguagem: Inglês

10.1109/tmtt.2017.2769049

1557-9670

Efe Öztürk, Dieter Genschow, Uroschanit Yodprasit, Selahattin Berk Yilmaz, Dietmar Kissinger, Wojciech Dębski, Wolfgang Winkler,

Acoustic Wave Resonator Technologies

In this paper, a high-range 60-GHz monostatic transceiver system suitable for frequency-modulated continuouswave (FMCW) applications is presented. The RF integrated circuit is fabricated using a 0.13-μm SiGe BiCMOS technology with fT/fmax of 250/340 GHz and occupies a very compact area of 1.42 × 0.72 mm 2 . All of the internal blocks are designed fully differential with an in-phase/quadrature receiver (RX) conversion gain of 14.8 dB and -18.2 dBm of input-referred 1-dB compression point and a transmitter (TX) with 6.4 dBm of output power. The 60-GHz voltage-controlled oscillator is of a push-push type Colpitts oscillator integrated into a frequency divider with an output frequency between 910 MHz and 1 GHz with the help of 3-bit frequency tuning mechanism for external phase-locked loop operations. Between the TX and RX channels, a tunable coupler is placed to guarantee a high isolation between channels which could withstand any fabrication failures and provide a single differential antenna output. On the TX side, two power detectors are placed in order to monitor the transmitted and reflected powers on the TX channel by passing through a branchline coupler for built-in-self-test purposes. The total current consumption of this transceiver is 156 mA at 3.3 V of single supply. Considering the successful real-time radar measurements, which the radar is able to detect the objects in more than 90-m range, it proves the suitability of this monostatic chip in high-range FMCW radar systems.