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Interconnected magnetic tunnel junctions for spin-logic applications

2018; American Institute of Physics; Volume: 8; Issue: 5 Linguagem: Inglês

10.1063/1.5007622

2158-3226

Mauricio Manfrini, Adrien Vaysset, Danny Wan, Eline Raymenants, Johan Swerts, Siddharth Rao, Odysseas Zografos, Laurent Souriau, Khashayar Babaei Gavan, Nouredine Rassoul, D. Radisic, M. Cupak, M. Dehan, Şafak Sayan, Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young, D. Mocuta, Iuliana Radu,

Quantum and electron transport phenomena

With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.